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H&M Semiconductor

HM6801 Datasheet Preview

HM6801 Datasheet

Dual P-Channel Enhancement Mode Power MOSFET

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HM6801
Dual P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM6801 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
GENERAL FEATURES
VDS = -30V,ID = -2.5A
RDS(ON) < 130m@ VGS=-10V
RDS(ON) < 180m@ VGS=-4.5V
DD
GG
SS
 
Schematic diagram
G1 1
S2 2
6
5
D1
S1
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
G2 3 4
D2
Marking and pin Assignment
Application
PWM applications
Load switch
Power management
SOT23-6L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
6801
HM6801
SOT-23-6L
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
-30
±20
-2.5
-10
1.2
-55 To 150
104
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-30V,VGS=0V
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
Page 1
Min Typ Max Unit
-30 -33
--
-
-1
V
μA
v1.1




H&M Semiconductor

HM6801 Datasheet Preview

HM6801 Datasheet

Dual P-Channel Enhancement Mode Power MOSFET

No Preview Available !

HM6801
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
IGSS
VGS(th)
RDS(ON)
VGS=±20V,VDS=0V
VDS=VGS,ID=-250μA
VGS=-10V, ID=-2.5A
VGS=-4.5V, ID=-1.5A
- - ±100 nA
-1 -1.6 -2.5
- 72 130
- 110 180
V
m
m
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=-10V,ID=-2A
-2
-
VDS=-15V,VGS=0V,
F=1.0MHz
- 950
- 115
- 75
-
-
-
VDD=-15V,RL=15
VGS=-10V,RGEN=6
VDS=-15V,ID=-2.0A,VGS=-10V
-
-
-
-
-
-
-
7
3
30
12
9.5
2
3
-
-
-
-
-
-
-
VGS=0V,IS=-2.5A
- - -1.2
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
Page 2
v1.1


Part Number HM6801
Description Dual P-Channel Enhancement Mode Power MOSFET
Maker H&M Semiconductor
Total Page 7 Pages
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