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HM6804 - Dual N-Channel MOSFET

General Description

The HM680 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V,ID = A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package S S   Schematic diagram G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 Marking and pin Assignment.

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HM680 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM680 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. D G D G GENERAL FEATURES ● VDS = 20V,ID = A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.