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HM6801 - Dual P-Channel Enhancement Mode Power MOSFET

General Description

The HM6801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -30V,ID = -2.5A RDS(ON) < 130mΩ @ VGS=-10V RDS(ON) < 180mΩ @ VGS=-4.5V DD GG SS   Schematic diagram G1 1 S2 2 6 5 D1 S1.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package G2 3 4 D2 Marking and pin Assignment.

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HM6801 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -2.5A RDS(ON) < 130mΩ @ VGS=-10V RDS(ON) < 180mΩ @ VGS=-4.