HM9N70 mosfet equivalent, n-channel mosfet.
* VDSS=700V／VGSS=±30V／ID=9A RDS(ON)=5mΩ(max.)@VGS=10V
* Low Dense Cell Design
* Reliable and Rugged
* Advanced trench process technology
Applications
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* Synchronous Rectification
* Power Management in Inverter System
Switching Time Test Circuit and Waveforms
Pin.
Pin Description
G D S TO-220 G D S TO-220F
Package Marking and Ordering Information
Device Marking HM9N70
Device HM9N70
Device Package TO-220/F
Reel Size -
Tape width -
Page 1
Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com
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