HGT1S7N60C3DS Description
The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices bining the.
HGT1S7N60C3DS Key Features
- 14A, 600V at TC = 25oC
- 600V Switching SOA Capability
- Typical Fall Time
- 140ns at TJ = 150oC
- Short Circuit Rating
- Low Conduction Loss
- Hyperfast Anti-Parallel Diode