HGT1S7N60C3DS datasheet, igbt equivalent, HARRIS

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HGT1S7N60C3DS Features and benefits

* 14A, 600V at TC = 25oC
* 600V Switching SOA Capability
* Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC
* Short Circuit Rating
* .

HGT1S7N60C3DS Application

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HGT1S7N60C3DS Description

The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss .

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