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HGT1S7N60C3DS Datasheet, Intersil Corporation

HGT1S7N60C3DS diodes equivalent, 14a/ 600v/ ufs series n-channel igbt with anti-parallel hyperfast diodes.

HGT1S7N60C3DS Avg. rating / M : 1.0 rating-11

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HGT1S7N60C3DS Datasheet

Features and benefits

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o.

Application

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

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