* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used
HGT1S7N60A4DS Datasheet (134.44 KB)
HGT1S7N60A4DS
Intersil Corporation
134.44 KB
600v/ smps series n-channel igbt.
TM
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
Data Sheet March 2000 File Number 4827.1
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Di.
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