HGT1S7N60A4DS - 600V SMPS Series N-Channel IGBT

Intersil Corporation

Datasheet Details

Part number	HGT1S7N60A4DS
Manufacturer	Intersil Corporation
File Size	134.44 KB
Description	600V SMPS Series N-Channel IGBT
Datasheet	HGT1S7N60A4DS_IntersilCorporation.pdf

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used in anti-parallel is the development type TA49370. This IGBT is ideal for many high voltage switching.

📁 HGT1S7N60A4DS Similar Datasheet

HGT1S7N60A4S9A - 600V SMPS Series N-Channel IGBT (Fairchild Semiconductor)
HGT1S7N60B3DS - 14A 600V UFS Series N-Channel IGBT (Fairchild Semiconductor)
HGT1S7N60C3D - UFS Series N-Channel IGBT (Fairchild Semiconductor)
HGT1S7N60C3DS - UFS Series N-Channel IGBT (Fairchild Semiconductor)
HGT1S10N120BNS - 35A/ 1200V/ NPT Series N-Channel IGBT (Fairchild Semiconductor)
HGT1S11N120CNS - N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60A4DS - N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60A4S9A - N-Channel IGBT (Fairchild Semiconductor)

Other Datasheets by Intersil Corporation

Published: Mar 23, 2005 |