Datasheet Specifications
- Part number
- HGT1S7N60A4DS
- Manufacturer
- Intersil Corporation
- File Size
- 134.44 KB
- Datasheet
- HGT1S7N60A4DS_IntersilCorporation.pdf
- Description
- 600V SMPS Series N-Channel IGBT
Description
TM HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Data Sheet March 2000 File Number 4827.1 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Di.
Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode usedHGT1S7N60A4DS Distributors
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