HGT1S12N60B3DS - N-Channel IGBT

Product Overview

Intersil Corporation

Part number	HGT1S12N60B3DS
Manufacturer	Intersil Corporation
File Size	117.61 KB
Description	N-Channel IGBT
Datasheet	HGT1S12N60B3DS Datasheet
Additional preview pages of the HGT1S12N60B3DS datasheet.

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49171. The diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high voltage switching.

📁 Similar Datasheet

HGT1S12N60A4DS - N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60A4S9A - N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60C3 - N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60C3DS - N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60C3S - N-Channel IGBT (Fairchild Semiconductor)
HGT1S10N120BNS - 35A/ 1200V/ NPT Series N-Channel IGBT (Fairchild Semiconductor)
HGT1S11N120CNS - N-Channel IGBT (Fairchild Semiconductor)
HGT1S14N36G3VL - N-Channel IGBT (Fairchild Semiconductor)

Other Datasheets by Intersil Corporation

Published: Mar 23, 2005 |