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HGT1S11N120CNS Datasheet - Fairchild Semiconductor

HGT1S11N120CNS - N-Channel IGBT

HGT1S11N120CNS Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: A

HGT1S11N120CNS_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

HGT1S11N120CNS

Manufacturer:

Fairchild Semiconductor

File Size:

138.07 KB

Description:

N-channel igbt.

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📌 All Tags

HGT1S11N120CNS N-Channel IGBT Fairchild Semiconductor