HGT1S12N60B3DS Datasheet - Fairchild Semiconductor

HGT1S12N60B3DS, N-Channel IGBT

HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This fam.

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Datasheet Details

Part number:

HGT1S12N60B3DS

Manufacturer:

Fairchild Semiconductor

File Size:

205.73 KB

Description:

N-Channel IGBT

Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49171. The diode used

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HGT1S12N60B3DS N-Channel IGBT Fairchild Semiconductor

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