Part number:
HGT1S12N60B3DS
Manufacturer:
Fairchild Semiconductor
File Size:
205.73 KB
Description:
N-channel igbt.
HGT1S12N60B3DS Datasheet (205.73 KB)
Datasheet Details
HGT1S12N60B3DS Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49171. The diode used
HGT1S12N60B3DS Datasheet (205.73 KB)
Datasheet Details
HGT1S12N60B3DS
Fairchild Semiconductor
205.73 KB
N-channel igbt.
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HGT1S12N60B3DS Distributor