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HGT1S12N60B3DS - N-Channel IGBT

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Fairchild Semiconductor

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HGT1S12N60B3DS N-Channel IGBT by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – HGT1S12N60B3DS

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Part number	HGT1S12N60B3DS
Manufacturer	Fairchild Semiconductor
File Size	205.73 KB
Description	N-Channel IGBT
Datasheet	HGT1S12N60B3DS Datasheet
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Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49171. The diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |