* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49171. The diode used
HGT1S12N60B3DS Datasheet (205.73 KB)
HGT1S12N60B3DS
Fairchild Semiconductor
205.73 KB
N-channel igbt.
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
Data Sheet December 2001
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
This fam.
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