* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching application
HGT1S12N60A4S Datasheet (115.04 KB)
HGT1S12N60A4S
Intersil Corporation
115.04 KB
N-channel igbt.
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S
Data Sheet May 1999 File Number
4656.2
600V, SMPS Series N-Channel IGBT
The HGTP12N60A4, HGTG12N60A4 and HGT1.
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