Part number:
HGT1S15N120C3
Manufacturer:
Intersil Corporation
File Size:
139.56 KB
Description:
N-channel igbt.
HGT1S15N120C3 Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
HGT1S15N120C3 Datasheet (139.56 KB)
Datasheet Details
HGT1S15N120C3
Intersil Corporation
139.56 KB
N-channel igbt.
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