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HGT1S15N120C3

N-Channel IGBT

HGT1S15N120C3 Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications

HGT1S15N120C3 Datasheet (139.56 KB)

Preview of HGT1S15N120C3 PDF

Datasheet Details

Part number:

HGT1S15N120C3

Manufacturer:

Intersil Corporation

File Size:

139.56 KB

Description:

N-channel igbt.

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HGT1S15N120C3 N-Channel IGBT Intersil Corporation

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