Part number:
HGT1S12N60C3S
Manufacturer:
Fairchild Semiconductor
File Size:
131.24 KB
Description:
N-channel igbt.
HGT1S12N60C3S Datasheet (131.24 KB)
Datasheet Details
HGT1S12N60C3S Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
HGT1S12N60C3S Datasheet (131.24 KB)
Datasheet Details
HGT1S12N60C3S
Fairchild Semiconductor
131.24 KB
N-channel igbt.
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