HGT1S12N60C3S - N-Channel IGBT

Product Overview

Fairchild Semiconductor

Part number	HGT1S12N60C3S
Manufacturer	Fairchild Semiconductor
File Size	131.24 KB
Description	N-Channel IGBT
Datasheet	HGT1S12N60C3S Datasheet
Additional preview pages of the HGT1S12N60C3S datasheet.

The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |