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HGT1S12N60C3DS Datasheet N-channel IGBT

Manufacturer: Intersil (now Renesas)

Overview: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.

HGT1S12N60C3DS datasheet preview

Datasheet Details

Part number	HGT1S12N60C3DS
Manufacturer	Intersil (now Renesas)
File Size	99.41 KB
Description	N-Channel IGBT
Datasheet	HGT1S12N60C3DS_IntersilCorporation.pdf

Key Features

of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high voltage switching.

HGT1S12N60C3DS Distributor

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