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HGT1S12N60C3DS - N-Channel IGBT

Key Features

  • of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high voltage switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49182.