Datasheet4U Logo Datasheet4U.com

HGT1S12N60C3DS Datasheet - Fairchild Semiconductor

HGT1S12N60C3DS - N-Channel IGBT

HGT1S12N60C3DS Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in a

HGT1S12N60C3DS_FairchildSemiconductor.pdf

Preview of HGT1S12N60C3DS PDF
HGT1S12N60C3DS Datasheet Preview Page 2 HGT1S12N60C3DS Datasheet Preview Page 3

Datasheet Details

Part number:

HGT1S12N60C3DS

Manufacturer:

Fairchild Semiconductor

File Size:

154.93 KB

Description:

N-channel igbt.

📁 Related Datasheet

📌 All Tags