* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in a
HGT1S12N60C3DS Datasheet (154.93 KB)
HGT1S12N60C3DS
Fairchild Semiconductor
154.93 KB
N-channel igbt.
HGTP12N60C3D, HGT1S12N60C3DS
Data Sheet December 2001
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
This family of MOS gat.
📁 Related Datasheet
HGT1S12N60C3DS N-Channel IGBT (Intersil Corporation)
HGT1S12N60C3 N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60C3S N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60C3S N-Channel IGBT (Intersil Corporation)
HGT1S12N60A4DS N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60A4DS N-Channel IGBT (Intersil Corporation)
HGT1S12N60A4DS N-Channel IGBT (ON Semiconductor)
HGT1S12N60A4S N-Channel IGBT (Intersil Corporation)
HGT1S12N60A4S9A N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60B3DS N-Channel IGBT (Fairchild Semiconductor)
