HGT1S12N60C3DS Datasheet - Fairchild Semiconductor

HGT1S12N60C3DS, N-Channel IGBT

HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gat.

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Datasheet Details

Part number:

HGT1S12N60C3DS

Manufacturer:

Fairchild Semiconductor

File Size:

154.93 KB

Description:

N-Channel IGBT

Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in a

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HGT1S12N60C3DS N-Channel IGBT Fairchild Semiconductor

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