* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: A
HGT1S11N120CNS Datasheet (81.89 KB)
HGT1S11N120CNS
Intersil Corporation
81.89 KB
N-channel igbt.
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS
Data Sheet January 2000 File Number 4577.2
43A, 1200V, NPT Series N-Channel IGBT
The HGTG11N120CN, HGTP11N.
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