HGT1S12N60A4S9A - N-Channel IGBT

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Fairchild Semiconductor

Part number	HGT1S12N60A4S9A
Manufacturer	Fairchild Semiconductor
File Size	229.62 KB
Description	N-Channel IGBT
Datasheet	HGT1S12N60A4S9A Datasheet
Additional preview pages of the HGT1S12N60A4S9A datasheet.

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |