* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching application
HGT1S12N60A4S9A Datasheet (229.62 KB)
HGT1S12N60A4S9A
Fairchild Semiconductor
229.62 KB
N-channel igbt.
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
Data Sheet August 2003
600V, SMPS Series N-Channel IGBTs
The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A a.
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