Part number:
HGT1S12N60A4S9A
Manufacturer:
Fairchild Semiconductor
File Size:
229.62 KB
Description:
N-channel igbt.
HGT1S12N60A4S9A Datasheet (229.62 KB)
Datasheet Details
HGT1S12N60A4S9A Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching application
HGT1S12N60A4S9A Datasheet (229.62 KB)
Datasheet Details
HGT1S12N60A4S9A
Fairchild Semiconductor
229.62 KB
N-channel igbt.
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HGT1S12N60A4S9A Distributor