HGT1S12N60A4S9A Datasheet, Igbt, Fairchild Semiconductor

HGT1S12N60A4S9A Features

  • Igbt of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage

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Part number:

HGT1S12N60A4S9A

Manufacturer:

Fairchild Semiconductor

File Size:

229.62kb

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📄 Datasheet

Description:

N-channel igbt.

Datasheet Preview: HGT1S12N60A4S9A 📥 Download PDF (229.62kb)
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HGT1S12N60A4S9A Application

  • Applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode

TAGS

HGT1S12N60A4S9A
N-Channel
IGBT
Fairchild Semiconductor

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Stock and price

onsemi
IGBT 600V 54A TO-263
DigiKey
HGT1S12N60A4S9A
0 In Stock
Qty : 1600 units
Unit Price : $1.35
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