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HGT1S12N60A4DS Datasheet - Fairchild Semiconductor

HGT1S12N60A4DS - N-Channel IGBT

HGT1S12N60A4DS Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is the development type TA49335. The diode used

HGT1S12N60A4DS_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

HGT1S12N60A4DS

Manufacturer:

Fairchild Semiconductor

File Size:

173.18 KB

Description:

N-channel igbt.

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HGT1S12N60A4DS N-Channel IGBT Fairchild Semiconductor