Part number:
HGT1S12N60A4DS
Manufacturer:
Fairchild Semiconductor
File Size:
173.18 KB
Description:
N-channel igbt.
HGT1S12N60A4DS Datasheet (173.18 KB)
Datasheet Details
HGT1S12N60A4DS Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is the development type TA49335. The diode used
HGT1S12N60A4DS Datasheet (173.18 KB)
Datasheet Details
HGT1S12N60A4DS
Fairchild Semiconductor
173.18 KB
N-channel igbt.
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