Part number:
HGT1S1N120BNDS
Manufacturer:
Intersil Corporation
File Size:
75.76 KB
Description:
N-channel igbt.
HGT1S1N120BNDS Datasheet (75.76 KB)
Datasheet Details
HGT1S1N120BNDS Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is development type number TA49316. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056). The IGBT is ideal for many high
HGT1S1N120BNDS Datasheet (75.76 KB)
Datasheet Details
HGT1S1N120BNDS
Intersil Corporation
75.76 KB
N-channel igbt.
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