Datasheet Specifications
- Part number
- HGT1S1N120BNDS
- Manufacturer
- Intersil Corporation
- File Size
- 75.76 KB
- Datasheet
- HGT1S1N120BNDS_IntersilCorporation.pdf
- Description
- N-Channel IGBT
Description
HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 File Number 4650.2 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The.
Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is development type number TA49316. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056). The IGBT is ideal for many highHGT1S1N120BNDS Distributors
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