HGT1S1N120BNDS Datasheet - Intersil Corporation

HGT1S1N120BNDS_IntersilCorporation.pdf

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Datasheet Details

Part number:

HGT1S1N120BNDS

Manufacturer:

Intersil Corporation

File Size:

75.76 KB

Description:

N-channel igbt.

HGT1S1N120BNDS, N-Channel IGBT

HGT1S1N120BNDS Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is development type number TA49316. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056). The IGBT is ideal for many high

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HGT1S1N120BNDS N-Channel IGBT Intersil Corporation

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