* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is development type number TA49316. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056). The IGBT is ideal for many high
HGT1S1N120BNDS Datasheet (75.76 KB)
HGT1S1N120BNDS
Intersil Corporation
75.76 KB
N-channel igbt.
HGTP1N120BND, HGT1S1N120BNDS
Data Sheet January 2000 File Number 4650.2
5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The.
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