HGT1S1N120BNDS Datasheet, Igbt, Intersil Corporation

HGT1S1N120BNDS Features

• Igbt of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is development type numbe

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Part number:

HGT1S1N120BNDS

Manufacturer:

Intersil Corporation

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75.76kb

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📄 Datasheet

Description:

N-channel igbt.

HGT1S1N120BNDS Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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HGT1S1N120BNDS

Intersil Corporation

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