HGT1S1N120CNDS Datasheet - Intersil Corporation

HGT1S1N120CNDS_IntersilCorporation.pdf

HGT1S1N120CNDS Datasheet Preview — Preview of HGT1S1N120CNDS PDF

Datasheet Details

Part number:

HGT1S1N120CNDS

Manufacturer:

Intersil Corporation

File Size:

80.18 KB

Description:

N-channel igbt.

HGT1S1N120CNDS, N-Channel IGBT

HGT1S1N120CNDS Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is development type number TA49317. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056). The IGBT is ideal for many high

📁 Related Datasheet

HGT1S10N120BNS HGT1S11N120CNS HGT1S12N60A4DS HGT1S12N60A4S9A HGT1S12N60B3DS HGT1S12N60C3

📌 All Tags

HGT1S1N120CNDS N-Channel IGBT Intersil Corporation

Intersil Corporation HGT1S1N120CNDS-like datasheet