* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is development type number TA49317. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056). The IGBT is ideal for many high
HGT1S1N120CNDS Datasheet (80.18 KB)
HGT1S1N120CNDS
Intersil Corporation
80.18 KB
N-channel igbt.
HGTP1N120CND, HGT1S1N120CNDS
Data Sheet January 2000 File Number 4651.1
6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The.
📁 Related Datasheet
HGT1S1N120BNDS N-Channel IGBT (Intersil Corporation)
HGT1S10N120BNS 35A/ 1200V/ NPT Series N-Channel IGBT (Fairchild Semiconductor)
HGT1S10N120BNS N-Channel IGBT (Intersil Corporation)
HGT1S11N120CNS N-Channel IGBT (Fairchild Semiconductor)
HGT1S11N120CNS N-Channel IGBT (Intersil Corporation)
HGT1S12N60A4DS N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60A4DS N-Channel IGBT (Intersil Corporation)
HGT1S12N60A4DS N-Channel IGBT (ON Semiconductor)
HGT1S12N60A4S N-Channel IGBT (Intersil Corporation)
HGT1S12N60A4S9A N-Channel IGBT (Fairchild Semiconductor)
