* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
HGT1S12N60C3S Datasheet (119.58 KB)
HGT1S12N60C3S
Intersil Corporation
119.58 KB
N-channel igbt.
HGTP12N60C3, HGT1S12N60C3S
Data Sheet January 2000 File Number 4040.4
24A, 600V, UFS Series N-Channel IGBTs
The HGTP12N60C3 and HGT1S12N60C3S are MOS.
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