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HGT1S12N60C3S Datasheet - Intersil Corporation

HGT1S12N60C3S - N-Channel IGBT

HGT1S12N60C3S Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications

HGT1S12N60C3S_IntersilCorporation.pdf

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Datasheet Details

Part number:

HGT1S12N60C3S

Manufacturer:

Intersil Corporation

File Size:

119.58 KB

Description:

N-channel igbt.

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