Datasheet Specifications
- Part number
- HGT1S7N60C3D
- Manufacturer
- Fairchild Semiconductor
- File Size
- 521.04 KB
- Datasheet
- HGT1S7N60C3D_FairchildSemiconductor.pdf
- Description
- UFS Series N-Channel IGBT
Description
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes September 2005 HGTP7N60C3D, HGT1S7.
Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used inApplications
* operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly DevHGT1S7N60C3D Distributors
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