HGT1S7N60C3D Datasheet, Igbt, Fairchild Semiconductor

HGT1S7N60C3D Features

• Igbt of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage

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HGT1S7N60C3D

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Fairchild Semiconductor

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📄 Datasheet

Description:

Ufs series n-channel igbt. The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs a

HGT1S7N60C3D Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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HGT1S7N60C3D

Fairchild Semiconductor

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