* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in
HGT1S7N60C3D Datasheet (521.04 KB)
HGT1S7N60C3D
Fairchild Semiconductor
521.04 KB
Ufs series n-channel igbt.
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
September 2005
HGTP7N60C3D, HGT1S7.
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