* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used
HGT1S7N60A4DS Datasheet (179.11 KB)
HGT1S7N60A4DS
Fairchild Semiconductor
179.11 KB
Smps series n-channel igbt.
Data Sheet
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
January 2005
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG7N60A4D,.
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