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HGT1S7N60A4DS - SMPS Series N-Channel IGBT

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Fairchild Semiconductor

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HGT1S7N60A4DS SMPS Series N-Channel IGBT by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – HGT1S7N60A4DS

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Part number	HGT1S7N60A4DS
Manufacturer	Fairchild Semiconductor
File Size	179.11 KB
Description	SMPS Series N-Channel IGBT
Datasheet	HGT1S7N60A4DS Datasheet
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Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used in anti-parallel is the development type TA49370. This IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |