* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49335. The diode used
HGT1S12N60A4DS Datasheet (394.54 KB)
HGT1S12N60A4DS
Intersil Corporation
394.54 KB
N-channel igbt.
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Data Sheet November 1999 File Number 4697.3
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast .
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