Part number:
HGT1S12N60A4DS
Manufacturer:
Intersil Corporation
File Size:
394.54 KB
Description:
N-channel igbt.
HGT1S12N60A4DS Datasheet (394.54 KB)
Datasheet Details
HGT1S12N60A4DS Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49335. The diode used
HGT1S12N60A4DS Datasheet (394.54 KB)
Datasheet Details
HGT1S12N60A4DS
Intersil Corporation
394.54 KB
N-channel igbt.
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