HGT1S12N60A4DS Datasheet, Igbt, Intersil Corporation

HGT1S12N60A4DS Features

• Igbt of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage

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Part number:

HGT1S12N60A4DS

Manufacturer:

Intersil Corporation

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394.54kb

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📄 Datasheet

Description:

N-channel igbt.

HGT1S12N60A4DS Application

• Applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode

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HGT1S12N60A4DS

Intersil Corporation

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