HGT1S12N60C3DS Datasheet, Igbt, Intersil Corporation

HGT1S12N60C3DS Features

• Igbt of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage dro

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HGT1S12N60C3DS

Manufacturer:

Intersil Corporation

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📄 Datasheet

Description:

N-channel igbt.

HGT1S12N60C3DS Application

• Applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49182. Features
• 2

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HGT1S12N60C3DS

Intersil Corporation

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