* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in a
HGT1S12N60C3DS Datasheet (99.41 KB)
HGT1S12N60C3DS
Intersil Corporation
99.41 KB
N-channel igbt.
HGTP12N60C3D, HGT1S12N60C3DS
Data Sheet January 2000 File Number 4261.1
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
This.
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