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HGT1S12N60C3DS Datasheet - Intersil Corporation

HGT1S12N60C3DS - N-Channel IGBT

HGT1S12N60C3DS Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in a

HGT1S12N60C3DS_IntersilCorporation.pdf

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Datasheet Details

Part number:

HGT1S12N60C3DS

Manufacturer:

Intersil Corporation

File Size:

99.41 KB

Description:

N-channel igbt.

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