Part number:
HGT1S12N60C3DS
Manufacturer:
Intersil Corporation
File Size:
99.41 KB
Description:
N-channel igbt.
HGT1S12N60C3DS_IntersilCorporation.pdf
Datasheet Details
HGT1S12N60C3DS Features
* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in a
HGT1S12N60C3DS_IntersilCorporation.pdf
Datasheet Details
HGT1S12N60C3DS
Intersil Corporation
99.41 KB
N-channel igbt.
HGT1S12N60C3DS Distributor
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