HGT1S12N60A4DS Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49335.
HGTG12N60A4D-ONSemiconductor.pdf
Datasheet Details
HGT1S12N60A4DS, HGTG12N60A4D
580.48 KB
N-channel igbt.
This datasheet PDF includes multiple part numbers: HGT1S12N60A4DS, HGTG12N60A4D.
Please refer to the document for exact specifications by model.
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