HGT1S12N60A4DS Datasheet, Igbt, ON Semiconductor

HGT1S12N60A4DS Features

  • Igbt of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on
  • state conduction loss of a bipolar transistor. The much lower on
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Part number:

HGT1S12N60A4DS

Manufacturer:

ON Semiconductor ↗

File Size:

580.48kb

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📄 Datasheet

Description:

N-channel igbt.

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HGT1S12N60A4DS Application

  • Applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode

TAGS

HGT1S12N60A4DS
N-Channel
IGBT
ON Semiconductor

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Stock and price

FLIP ELECTRONICS
IGBT 600V 54A TO-263
DigiKey
HGT1S12N60A4DS
4000 In Stock
Qty : 200 units
Unit Price : $2.98
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