* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49335.
HGT1S12N60A4DS Datasheet (580.48 KB)
HGT1S12N60A4DS
580.48 KB
N-channel igbt.
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600 V
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
The HGTG12N60A4D, HGTP12N60A4D and HGT1.
📁 Related Datasheet
HGT1S12N60A4DS N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60A4DS N-Channel IGBT (Intersil Corporation)
HGT1S12N60A4S N-Channel IGBT (Intersil Corporation)
HGT1S12N60A4S9A N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60B3DS N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60B3DS N-Channel IGBT (Intersil Corporation)
HGT1S12N60B3S N-Channel IGBT (Intersil Corporation)
HGT1S12N60C3 N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60C3DS N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60C3DS N-Channel IGBT (Intersil Corporation)
