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HGT1S12N60A4DS, HGTG12N60A4D Datasheet - ON Semiconductor

HGTG12N60A4D-ONSemiconductor.pdf

This datasheet PDF includes multiple part numbers: HGT1S12N60A4DS, HGTG12N60A4D. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

HGT1S12N60A4DS, HGTG12N60A4D

Manufacturer:

ON Semiconductor ↗

File Size:

580.48 KB

Description:

N-channel igbt.

Note:

This datasheet PDF includes multiple part numbers: HGT1S12N60A4DS, HGTG12N60A4D.
Please refer to the document for exact specifications by model.

HGT1S12N60A4DS, HGTG12N60A4D, N-Channel IGBT

HGT1S12N60A4DS Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on

* state conduction loss of a bipolar transistor. The much lower on

* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49335.

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