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HGTG11N120CND

N-Channel IGBT

HGTG11N120CND Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on

* state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switch

HGTG11N120CND General Description

Symbol HGTG11N120CND Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 1200 V IC25 43 A IC110 22 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 15.

HGTG11N120CND Datasheet (435.88 KB)

Preview of HGTG11N120CND PDF

Datasheet Details

Part number:

HGTG11N120CND

Manufacturer:

ON Semiconductor ↗

File Size:

435.88 KB

Description:

N-channel igbt.
NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 43 A, 1200 V HGTG11N120CND The HGTG11N120CND is a Non

* Punch Through (NPT) IGBT d.

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TAGS

HGTG11N120CND N-Channel IGBT ON Semiconductor

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