HGTG11N120CND Datasheet, Igbt, ON Semiconductor

HGTG11N120CND Features

• Igbt of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on
• state conduction loss of a bipolar transistor. The IGBT used is the devel

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HGTG11N120CND

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ON Semiconductor ↗

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📄 Datasheet

Description:

N-channel igbt. Symbol HGTG11N120CND Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 1200 V

HGTG11N120CND Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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HGTG11N120CND

ON Semiconductor

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