Datasheet Details
- Part number
- HGTG11N120CND
- Manufacturer
- ON Semiconductor ↗
- File Size
- 435.88 KB
- Datasheet
- HGTG11N120CND-ONSemiconductor.pdf
- Description
- N-Channel IGBT
HGTG11N120CND Description
NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 43 A, 1200 V HGTG11N120CND The HGTG11N120CND is a Non * Punch Through (NPT) IGBT d.
Symbol
HGTG11N120CND
Units
Collector to Emitter Voltage
Collector Current Continuous At TC = 25°C At TC = 110°C
BVCES
1200
V
IC25
43
A
IC11.
HGTG11N120CND Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189.
The IGBT is ideal for many high voltage switch
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