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HGTG10N120BND Datasheet - Fairchild Semiconductor

HGTG10N120BND - N-Channel IGBT

HGTG10N120BND Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching appli

HGTG10N120BND_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

HGTG10N120BND

Manufacturer:

Fairchild Semiconductor

File Size:

110.93 KB

Description:

N-channel igbt.

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