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HGTG12N60C3D

N-Channel IGBT

HGTG12N60C3D Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in a

HGTG12N60C3D Datasheet (98.22 KB)

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Datasheet Details

Part number:

HGTG12N60C3D

Manufacturer:

Intersil Corporation

File Size:

98.22 KB

Description:

N-channel igbt.
HGTG12N60C3D Data Sheet January 2000 File Number 4043.2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a.

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HGTG12N60C3D N-Channel IGBT Intersil Corporation

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