HGTG12N60C3D - N-Channel IGBT

Product Overview

Intersil Corporation

Part number	HGTG12N60C3D
Manufacturer	Intersil Corporation
File Size	98.22 KB
Description	N-Channel IGBT
Datasheet	HGTG12N60C3D Datasheet
Additional preview pages of the HGTG12N60C3D datasheet.

of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti parallel with the IGBT is the development type TA49061. The IGBT is ideal for many high voltage switching.

📁 Similar Datasheet

HGTG12N60A4 - N-Channel IGBT (Fairchild Semiconductor)
HGTG12N60A4D - N-Channel IGBT (Fairchild Semiconductor)
HGTG12N60B3 - N-Channel IGBT (Fairchild Semiconductor)
HGTG12N60B3D - N-Channel IGBT (Fairchild Semiconductor)
HGTG10N120BN - 35A/ 1200V/ NPT Series N-Channel IGBT (Fairchild Semiconductor)
HGTG10N120BND - N-Channel IGBT (Fairchild Semiconductor)
HGTG11N120CN - N-Channel IGBT (Fairchild Semiconductor)
HGTG11N120CND - N-Channel IGBT (Fairchild Semiconductor)

Other Datasheets by Intersil Corporation

Published: Mar 23, 2005 |