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HGTG11N120CND Datasheet - Fairchild Semiconductor

HGTG11N120CND - N-Channel IGBT

HGTG11N120CND Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching appl

HGTG11N120CND_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

HGTG11N120CND

Manufacturer:

Fairchild Semiconductor

File Size:

110.12 KB

Description:

N-channel igbt.

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