HGTG11N120CND Datasheet, Igbt, Fairchild Semiconductor

HGTG11N120CND Features

• Igbt of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development t

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HGTG11N120CND

Manufacturer:

Fairchild Semiconductor

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📄 Datasheet

Description:

N-channel igbt.

HGTG11N120CND Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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HGTG11N120CND

Fairchild Semiconductor

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