* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
HGTG12N60B3 Datasheet (247.54 KB)
HGTG12N60B3
Fairchild Semiconductor
247.54 KB
N-channel igbt.
HGTG12N60B3
Data Sheet August 2003
27A, 600V, UFS Series N-Channel IGBTs
This family of MOS gated high voltage switching devices combine the best fea.
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