Part number:
HGTG12N60B3
Manufacturer:
Fairchild Semiconductor
File Size:
247.54 KB
Description:
N-channel igbt.
HGTG12N60B3 Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
HGTG12N60B3 Datasheet (247.54 KB)
Datasheet Details
HGTG12N60B3
Fairchild Semiconductor
247.54 KB
N-channel igbt.
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