HGTG12N60B3 Datasheet, Igbt, Fairchild Semiconductor

HGTG12N60B3 Features

• Igbt of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage

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Part number:

HGTG12N60B3

Manufacturer:

Fairchild Semiconductor

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247.54kb

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📄 Datasheet

Description:

N-channel igbt.

HGTG12N60B3 Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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HGTG12N60B3

Fairchild Semiconductor

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