* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching appl
HGTG11N120CND Datasheet (82.18 KB)
HGTG11N120CND
Intersil Corporation
82.18 KB
N-channel igbt.
HGTG11N120CND
Data Sheet January 2000 File Number 4580.2
43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG11N120CND i.
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