Part number:
HGTG11N120CND
Manufacturer:
Intersil Corporation
File Size:
82.18 KB
Description:
N-channel igbt.
HGTG11N120CND_IntersilCorporation.pdf
Datasheet Details
HGTG11N120CND Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching appl
HGTG11N120CND_IntersilCorporation.pdf
Datasheet Details
HGTG11N120CND
Intersil Corporation
82.18 KB
N-channel igbt.
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