HGTG10N120BN - 35A/ 1200V/ NPT Series N-Channel IGBT
HGTG10N120BN Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: A
