* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: A
HGTG10N120BN Datasheet (217.60 KB)
HGTG10N120BN
Fairchild Semiconductor
217.60 KB
35a/ 1200v/ npt series n-channel igbt.
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Data Sheet August 2002
35A, 1200V, NPT Series N-Channel IGBT
The HGTG10N120BN, HGTP10N120BN and HGT1S10N12.
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