HGTG10N120BN Datasheet, Igbt, Fairchild Semiconductor

HGTG10N120BN Features

• Igbt of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high vol

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HGTG10N120BN

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Fairchild Semiconductor

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📄 Datasheet

Description:

35a/ 1200v/ npt series n-channel igbt.

HGTG10N120BN Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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HGTG10N120BN

Fairchild Semiconductor

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