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HGTG12N60D1D N-Channel IGBT

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Description

HGTG12N60D1D April 1995 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR COLLECTOR (BOTTOM SI.
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.

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Features

* 12A, 600V
* Latch Free Operation
* Typical Fall Time

Applications

* operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTG12N60D1D PACKAGE TO-220AB BRAND G12N60D1D Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G

HGTG12N60D1D Distributors

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📌 All Tags

HGTG12N60D1D N-Channel IGBT Intersil Corporation
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