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HGTG18N120BN - N-Channel IGBT

Datasheet Summary

Features

  • of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching.

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Datasheet Details

Part number HGTG18N120BN
Manufacturer Intersil Corporation
File Size 84.92 KB
Description N-Channel IGBT
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HGTG18N120BN Data Sheet January 2000 File Number 4518.3 54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49288. Features • 54A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . .
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