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HGTG11N120CN

N-Channel IGBT

HGTG11N120CN Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: A

HGTG11N120CN Datasheet (138.07 KB)

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Datasheet Details

Part number:

HGTG11N120CN

Manufacturer:

Fairchild Semiconductor

File Size:

138.07 KB

Description:

N-channel igbt.
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11.

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HGTG11N120CN N-Channel IGBT Fairchild Semiconductor

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