* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: A
HGTG18N120BND Datasheet (95.56 KB)
HGTG18N120BND
Intersil Corporation
95.56 KB
N-channel igbt.
HGTG18N120BND Data Sheet January 2000 File Number 4555.1 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND i.
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