* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in a
HGTG12N60C3D Datasheet (151.44 KB)
HGTG12N60C3D
Fairchild Semiconductor
151.44 KB
N-channel igbt.
Data Sheet
HGTG12N60C3D
December 2001
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG12N60C3D is a MOS gated high v.
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