HGTG12N60C3D Datasheet, Igbt, Fairchild Semiconductor

HGTG12N60C3D Features

• Igbt of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage dro

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HGTG12N60C3D

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Fairchild Semiconductor

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📄 Datasheet

Description:

N-channel igbt.

HGTG12N60C3D Application

• Applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49117. Ordering Information

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HGTG12N60C3D

Fairchild Semiconductor

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