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HGTG11N120CN Datasheet - Intersil Corporation

HGTG11N120CN - N-Channel IGBT

HGTG11N120CN Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: A

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Datasheet Details

Part number:

HGTG11N120CN

Manufacturer:

Intersil Corporation

File Size:

81.89 KB

Description:

N-channel igbt.

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