HGTG20N60B3D - N-Channel IGBT
HGTG20N60B3D Features
* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The diode used in anti
* parallel with the I
