HGTG20N60B3D Datasheet - ON Semiconductor

HGTG20N60B3D N-Channel IGBT

HGTG20N60B3D Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on

* state conduction loss of a bipolar transistor. The much lower on

* state voltage drop varies only moderately between 25°C and 150°C. The diode used in anti

* parallel with the I

Datasheet Details

HGTG20N60B3D

428.17 KB

N-channel igbt.

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