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HGTG20N60B3D Datasheet - ON Semiconductor

HGTG20N60B3D - N-Channel IGBT

HGTG20N60B3D Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on

* state conduction loss of a bipolar transistor. The much lower on

* state voltage drop varies only moderately between 25°C and 150°C. The diode used in anti

* parallel with the I

HGTG20N60B3D-ONSemiconductor.pdf

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Datasheet Details

Part number:

HGTG20N60B3D

Manufacturer:

ON Semiconductor ↗

File Size:

428.17 KB

Description:

N-channel igbt.

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