HGTG20N60B3D Datasheet - ON Semiconductor

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HGTG20N60B3D N-Channel IGBT

UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 40 A, 600 V HGTG20N60B3D The HGTG20N60B3D is a MOS gated high voltage switching device co.

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Datasheet Details

Part number:

HGTG20N60B3D

Manufacturer:

ON Semiconductor ↗

File Size:

428.17 KB

Description:

N-Channel IGBT

Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The diode used in anti
* parallel with the I

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HGTG20N60B3D N-Channel IGBT ON Semiconductor

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