* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The diode used in anti
* parallel with the I
HGTG20N60B3D Datasheet (428.17 KB)
HGTG20N60B3D
428.17 KB
N-channel igbt.
UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 40 A, 600 V HGTG20N60B3D The HGTG20N60B3D is a MOS gated high voltage switching device co.
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