* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
HGTG20N60B3 Datasheet (191.10 KB)
HGTG20N60B3
Fairchild Semiconductor
191.10 KB
N-channel igbt.
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
Data Sheet January 2000 File Number 3723.6
40A, 600V, UFS Series N-Channel IGBTs
The HGT1S20N60B3S, the HGTP2.
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