* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. This IGBT is ideal for many high voltage switching applicatio
HGTG20N60A4 Datasheet (140.56 KB)
HGTG20N60A4
Fairchild Semiconductor
140.56 KB
N-channel igbt.
HGTG20N60A4, HGTP20N60A4
Data Sheet December 2001
600V, SMPS Series N-Channel IGBTs
The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switch.
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