* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications op
HGTG20N120C3D Datasheet (97.79 KB)
HGTG20N120C3D
Intersil Corporation
97.79 KB
N-channel igbt.
HGTG20N120C3D
Data Sheet October 1998 File Number
4508.1
45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N120C3D i.
📁 Related Datasheet
HGTG20N120CN N-Channel IGBT (Intersil Corporation)
HGTG20N120CND N-Channel IGBT (Intersil Corporation)
HGTG20N120 N-Channel IGBT (Intersil Corporation)
HGTG20N120E2 N-Channel IGBT (Intersil Corporation)
HGTG20N100D2 N-Channel IGBT (Intersil Corporation)
HGTG20N50C1D N-Channel IGBT (Intersil Corporation)
HGTG20N60A4 N-Channel IGBT (Fairchild Semiconductor)
HGTG20N60A4 N-Channel IGBT (Intersil Corporation)
HGTG20N60A4 IGBT (ON Semiconductor)
HGTG20N60A4D N-Channel IGBT (Fairchild Semiconductor)
