* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications op
HGTG20N120C3D Datasheet (97.79 KB)
HGTG20N120C3D
Intersil Corporation
97.79 KB
N-channel igbt.
HGTG20N120C3D Data Sheet October 1998 File Number 4508.1 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120C3D i.
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