* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is development type TA49178. The diode used in ant
HGTG20N60C3D Datasheet (123.08 KB)
HGTG20N60C3D
Fairchild Semiconductor
123.08 KB
N-channel igbt.
HGTG20N60C3D
Data Sheet December 2001
45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60C3D is a MOS gated high vo.
📁 Related Datasheet
HGTG20N60C3 N-Channel IGBT (Fairchild Semiconductor)
HGTG20N60C3 N-Channel IGBT (Intersil Corporation)
HGTG20N60C3D N-Channel IGBT (Intersil Corporation)
HGTG20N60C3R N-Channel IGBTs (Intersil)
HGTG20N60C3R N-Channel IGBTs (HARRIS)
HGTG20N60A4 N-Channel IGBT (Fairchild Semiconductor)
HGTG20N60A4 N-Channel IGBT (Intersil Corporation)
HGTG20N60A4 IGBT (ON Semiconductor)
HGTG20N60A4D N-Channel IGBT (Fairchild Semiconductor)
HGTG20N60A4D N-Channel IGBT (ON Semiconductor)
