HGTG20N120 Datasheet - Intersil Corporation

HGTG20N120, N-Channel IGBT

Semiconductor HGTG20N120E2 34A, 1200V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) April 1995 Fea.
The HGTG20N120E2 is a MOS gated, high voltage switching device combining the best features of MOSFETs and bipolar transistors.

datasheet Preview Page 1 from Datasheet4u.com

HGTG20N120_IntersilCorporation.pdf

HGTG20N120 Datasheet Preview — Preview of HGTG20N120 PDF

Datasheet Details

Part number:

HGTG20N120

Manufacturer:

Intersil Corporation

File Size:

167.55 KB

Description:

N-Channel IGBT

Features

* 34A, 1200V
* Latch Free Operation
* Typical Fall Time - 780ns
* High Input Impedance

Applications

* operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. The development type number for this device is TA49009. PACKAGING AVAILABILITY PART NUMBER HGTG20N120E2 PACKAGE TO-247 BRAND G20N120

HGTG20N120 Distributors

📁 Related Datasheet

HGTG20N60A4 HGTG20N60A4D HGTG20N60B3 HGTG20N60B3D HGTG20N60C3 HGTG20N60C3D

📌 All Tags

HGTG20N120 N-Channel IGBT Intersil Corporation

Intersil Corporation HGTG20N120-like datasheet