* 34A, 1200V
* Latch Free Operation
* Typical Fall Time - 780ns
* High Input Impedance
* Low Conduction Loss Description The HGTG20N120E2 is a MOS gated, high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device
HGTG20N120 Datasheet (167.55 KB)
HGTG20N120
Intersil Corporation
167.55 KB
N-channel igbt.
Semiconductor
HGTG20N120E2
34A, 1200V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL)
April 1995
Fea.
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