HGTG20N60B3D Datasheet - Fairchild Semiconductor

HGTG20N60B3D, N-Channel IGBT

HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high vo.

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Datasheet Details

Part number:

HGTG20N60B3D

Manufacturer:

Fairchild Semiconductor

File Size:

179.53 KB

Description:

N-Channel IGBT

Features

* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. The

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HGTG20N60B3D N-Channel IGBT Fairchild Semiconductor

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