HGTG20N60A4D Datasheet - Fairchild Semiconductor

HGTG20N60A4D, N-Channel IGBT

Data Sheet HGTG20N60A4D February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high volta.

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Datasheet Details

Part number:

HGTG20N60A4D

Manufacturer:

Fairchild Semiconductor

File Size:

149.06 KB

Description:

N-Channel IGBT

Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in

Applications

* operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49341. Ordering Information PART NUMBER PACKAGE BRAND HGTG20N60A4D TO-247 20N60A4D NOTE: When ordering, use the

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HGTG20N60A4D N-Channel IGBT Fairchild Semiconductor

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