* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in
HGTG20N60A4D Datasheet (149.06 KB)
HGTG20N60A4D
Fairchild Semiconductor
149.06 KB
N-channel igbt.
Data Sheet
HGTG20N60A4D
February 2009
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60A4D is a MOS gated high volta.
📁 Related Datasheet
HGTG20N60A4 N-Channel IGBT (Fairchild Semiconductor)
HGTG20N60A4 N-Channel IGBT (Intersil Corporation)
HGTG20N60A4 IGBT (ON Semiconductor)
HGTG20N60A4D N-Channel IGBT (ON Semiconductor)
HGTG20N60B3 N-Channel IGBT (Fairchild Semiconductor)
HGTG20N60B3 N-Channel IGBT (Intersil Corporation)
HGTG20N60B3 N-Channel IGBT (ON Semiconductor)
HGTG20N60B3D N-Channel IGBT (Fairchild Semiconductor)
HGTG20N60B3D N-Channel IGBT (Intersil Corporation)
HGTG20N60B3D N-Channel IGBT (ON Semiconductor)
