* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: A
HGTG20N120CND Datasheet (93.09 KB)
HGTG20N120CND
Intersil Corporation
93.09 KB
N-channel igbt.
HGTG20N120CND Data Sheet January 2000 File Number 4535.2 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND i.
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