HGTG20N50C1D N-Channel IGBT

Intersil Corporation

Description

HGTG20N50C1D April 1995 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR COLLECTOR (BOTTOM SI.
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.

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Datasheet Specifications

Part number: HGTG20N50C1D
Manufacturer: Intersil Corporation
File Size: 33.27 KB
Datasheet: HGTG20N50C1D_IntersilCorporation.pdf
Description: N-Channel IGBT

Features

* 20A, 500V
* Latch Free Operation
* Typical Fall Time < 500ns
* High Input Impedance
* Low Conduction Loss
* With Anti-Parallel Diode

Applications

* operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contractors. PACKAGING AVAILABILITY PART NUMBER HGTG20N50C1D PACKAGE TO-247 BRAND G20N50C1D Terminal Diagram C G E NOTE: When ordering, use

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HGTG20N50C1D N-Channel IGBT Intersil Corporation

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