* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as:
HGTG27N120BN Datasheet (212.11 KB)
HGTG27N120BN
Fairchild Semiconductor
212.11 KB
N-channel igbt.
HGTG27N120BN / HGT5A27N120BN Data Sheet August 2002 72A, 1200V, NPT Series N-Channel IGBT The HGTG27N120BN and HGT5A27N120BN are NonPunch Through (NP.
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